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Package Marking and Ordering Information
Part Number
FDD7N60NZTM
FDU7N60NZTU
Top Mark
FDD7N60NZ
FDU7N60NZ
Package
DPAK
IPAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
N/A
Tape Width
16 mm
N/A
Quantity
2500 units
75 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0 V, T J = 25 o C
600
-
-
V
Δ BV DSS
/ Δ T J
I DSS
I GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, Referenced to
V DS = 600 V, V GS = 0 V
V DS = 480 V, T C = 125 o C
V GS = ±25 V, V DS = 0 V
25 o C
-
-
-
-
0.6
-
-
-
-
50
100
±10
V/ o C
μ A
μ A
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 2.75 A
V DS = 20 V, I D = 2.75 A
3.0
-
-
-
1.05
7.3
5.0
1.25
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1 MHz
-
-
-
550
70
7
730
90
10
pF
pF
pF
Q g(tot)
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 400 V, I D = 5.5 A,
V GS = 10 V
(Note 4)
-
-
-
13
3
5.6
17
-
-
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 250 V, I D = 5.5 A,
V GS = 10 V, R G = 25 Ω
(Note 4)
-
-
-
-
17.5
30
40
25
45
70
90
60
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
5.5
22
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 5.5 A
V GS = 0 V, I SD = 5.5 A,
dI F /dt = 100 A/ μ s
-
-
-
-
250
1.4
1.4
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 23 mH, I AS = 5.5 A, V DD = 50 V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 5.5 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2011 Fairchild Semiconductor Corporation
FDD7N60NZ / FDU7N60NZTU Rev. C1
2
www.fairchildsemi.com
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